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? semiconductor components industries, llc, 2013 june, 2013 ? rev. 17 1 publication order number: ncs2001/d ncs2001, ncv2001 0.9 v, rail-to-rail, single operational amplifier the ncs2001 is an industry first sub ? one voltage operational amplifier that features a rail ? to ? rail common mode input voltage range, along with rail ? to ? rail output drive capability. this amplifier is guaranteed to be fully operational down to 0.9 v, providing an ideal solution for powering applications from a single cell nickel cadmium (nicd) or nickel metal hydride (nimh) battery. additional features include no output phase reversal with overdriven inputs, trimmed input offset voltage of 0.5 mv, extremely low input bias current of 40 pa, and a unity gain bandwidth of 1.4 mhz at 5.0 v. the tiny ncs2001 is the ideal solution for small portable electronic applications and is available in the space saving sot23 ? 5 and sc70 ? 5 packages with two industry standard pinouts. features ? 0.9 v guaranteed operation ? rail ? to ? rail common mode input voltage range ? rail ? to ? rail output drive capability ? no output phase reversal for over ? driven input signals ? 0.5 mv trimmed input offset ? 10 pa input bias current ? 1.4 mhz unity gain bandwidth at 2.5 v, 1.1 mhz at 0.5 v ? tiny sc70 ? 5 and sot23 ? 5 packages ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q100 qualified and ppap capable ? these are pb ? free devices typical applications ? single cell nicd/nimh battery powered applications ? cellular telephones ? pagers ? personal digital assistants ? electronic games ? digital cameras ? camcorders ? hand ? held instruments figure 1. typical application this device contains 63 active transistors. - + 0.8 v to 7.0 v rail to rail input rail to rail output http://onsemi.com ordering information sot23 ? 5 sn suffix case 483 pin connections 1 v out v cc non ? inverting input 2 3 5 4 v ee inverting input style 1 pinout (sn1t1, sq1t2) + ? 1 v out v ee non ? inverting input 2 3 5 4 v cc inverting input style 2 pinout (sn2t1, sq2t2) + ? marking diagrams x = g for sn1 h for sn2 i for sq1 j for sq2 a = assembly location y = year w = work week m = date code =pb ? free package 1 2 3 4 5 sc70 ? 5 sq suffix case 419a m 1 5 see detailed ordering and shipping information in the dimensions section on page 14 of this data sheet. aax | (note: microdot may be in either location) 1 5 mbb ayw 1 5 aax ayw ncv2001sn2 1 5
ncs2001, ncv2001 http://onsemi.com 2 maximum ratings rating symbol value unit supply voltage (v cc to v ee ) v s 7.0 v input differential voltage range (note 1) v idr v ee ? 300 mv to 7.0 v v input common mode voltage range (note 1) v icr v ee ? 300 mv to 7.0 v v output short circuit duration (note 2) t sc indefinite sec junction temperature t j 150 c power dissipation and thermal characteristics sot23 ? 5 package thermal resistance, junction ? to ? air power dissipation @ t a = 70 c sc70 ? 5 package thermal resistance, junction ? to ? air power dissipation @ t a = 70 c r ja p d r ja p d 235 340 280 286 c/w mw c/w mw operating ambient temperature range ncs2001 ncv2001 (note 3) t a ? 40 to +105 ? 40 to +125 c storage temperature range t stg ? 65 to 150 c esd protection at any pin human body model (note 4) v esd 1500 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. either or both inputs should not exceed the range of v ee ? 300 mv to v ee +7.0 v. 2. maximum package power dissipation limits must be observed to ensure that the maximum junction temperature is not exceeded. t j = t a + (p d r ja ). 3. ncv prefix is qualified for automotive usage. 4. esd data available upon request. dc electrical characteristics (v cc = 2.5 v, v ee = ? 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics symbol min typ max unit input offset voltage v cc = 0.45 v, v ee = ? 0.45 v t a = 25 c t a = 0 c to 70 c t a = ? 40 c to 125 c v cc = 1.5 v, v ee = ? 1.5 v t a = 25 c t a = 0 c to 70 c t a = ? 40 c to 125 c v cc = 2.5 v, v ee = ? 2.5 v t a = 25 c t a = 0 c to 70 c t a = ? 40 c to 125 c v io ? 6.0 ? 8.5 ? 9.5 ? 6.0 ? 7.0 ? 7.5 ? 6.0 ? 7.5 ? 7.5 0.5 ? ? 0.5 ? ? 0.5 ? ? 6.0 8.5 9.5 6.0 7.0 7.5 6.0 7.5 7.5 mv input offset voltage temperature coefficient (r s = 50) t a = ? 40 c to 125 c v io / t ? 8.0 ? v/ c input bias current (v cc = 1.0 v to 5.0 v) i ib ? 10 ? pa input common mode voltage range v icr ? v ee to v cc ? v large signal voltage gain v cc = 0.45 v, v ee = ? 0.45 v r l = 10 k r l = 2.0 k v cc = 1.5 v, v ee = ? 1.5 v r l = 10 k r l = 2.0 k v cc = 2.5 v, v ee = ? 2.5 v r l = 10 k r l = 2.0 k a vol ? ? ? ? 20 15 40 20 40 40 40 40 ? ? ? ? ? ? kv/v
ncs2001, ncv2001 http://onsemi.com 3 dc electrical characteristics (continued) (v cc = 2.5 v, v ee = ? 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics unit max typ min symbol output voltage swing, high state output (v id = +0.5 v) v cc = 0.45 v, v ee = ? 0.45 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = ? 40 c to 125 c r l = 10 k r l = 2.0 k v cc = 1.5 v, v ee = ? 1.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = ? 40 c to 125 c r l = 10 k r l = 2.0 k v cc = 2.5 v, v ee = ? 2.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = ? 40 c to 125 c r l = 10 k r l = 2.0 k v oh 0.40 0.35 0.40 0.35 0.40 0.35 1.45 1.40 1.45 1.40 1.45 1.40 2.45 2.40 2.45 2.40 2.45 2.40 0.494 0.466 ? ? ? ? 1.498 1.480 ? ? ? ? 2.498 2.475 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? v output voltage swing, low state output (v id = ? 0.5 v) v cc = 0.45 v, v ee = ? 0.45 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = ? 40 c to 125 c r l = 10 k r l = 2.0 k v cc = 1.5 v, v ee = ? 1.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = ? 40 c to 125 c r l = 10 k r l = 2.0 k v cc = 2.5 v, v ee = ? 2.5 v t a = 25 c r l = 10 k r l = 2.0 k t a = 0 c to 70 c r l = 10 k r l = 2.0 k t a = ? 40 c to 125 c r l = 10 k r l = 2.0 k v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.494 ? 0.480 ? ? ? ? ? 1.493 ? 1.480 ? ? ? ? ? 2.492 ? 2.479 ? ? ? ? ? 0.40 ? 0.35 ? 0.40 ? 0.35 ? 0.40 ? 0.35 ? 1.45 ? 1.40 ? 1.45 ? 1.40 ? 1.45 ? 1.40 ? 2.45 ? 2.40 ? 2.45 ? 2.40 ? 2.45 ? 2.40 v
ncs2001, ncv2001 http://onsemi.com 4 dc electrical characteristics (continued) (v cc = 2.5 v, v ee = ? 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics unit max typ min symbol common mode rejection ratio (v in = 0 to 5.0 v) cmrr 60 70 ? db power supply rejection ratio (v cc = 0.5 v to 2.5 v, v ee = ? 2.5 v) psrr 55 65 ? db output short circuit current v cc = 0.45 v, v ee = ? 0.45 v, v id = 0.4 v source current high output state sink current low output state v cc = 1.5 v, v ee = ? 1.5 v, v id = 0.5 v source current high output state sink current low output state v cc = 2.5 v, v ee = ? 2.5 v, v id = 0.5 v source current high output state sink current low output state i sc 0.5 ? 15 ? 40 ? 1.2 ? 3.0 29 ? 40 76 ? 96 ? ? 1.5 ? ? 20 ? ? 50 ma power supply current (per amplifier, v o = 0 v) v cc = 0.45 v, v ee = ? 0.45 v t a = 25 c t a = 0 c to 70 c t a = ? 40 c to 125 c v cc = 1.5 v, v ee = ? 1.5 v t a = 25 c t a = 0 c to 70 c t a = ? 40 c to 125 c v cc = 2.5 v, v ee = ? 2.5 v t a = 25 c t a = 0 c to 70 c t a = ? 40 c to 125 c i d ? ? ? ? ? ? ? ? ? 0.51 ? ? 0.72 ? ? 0.82 ? ? 1.10 1.10 1.10 1.40 1.40 1.40 1.50 1.50 1.50 ma ac electrical characteristics (v cc = 2.5 v, v ee = ? 2.5 v, v cm = v o = 0 v, r l to gnd, t a = 25 c unless otherwise noted.) characteristics symbol min typ max unit differential input resistance (v cm = 0 v) r in ? 1.0 ? tera differential input capacitance (v cm = 0 v) c in ? 3.0 ? pf equivalent input noise voltage (f = 1.0 khz) e n ? 100 ? nv/ hz gain bandwidth product (f = 100 khz) v cc = 0.45 v, v ee = ? 0.45 v v cc = 1.5 v, v ee = ? 1.5 v v cc = 2.5 v, v ee = ? 2.5 v gbw ? ? 0.5 1.1 1.3 1.4 ? ? ? mhz gain margin (r l = 10 k, c l = 5.0 pf) am ? 6.5 ? db phase margin (r l = 10 k, c l = 5.0 pf) m ? 60 ? power bandwidth (v o = 4.0 v pp , r l = 2.0 k, thd = 1.0%, a v = 1.0) bw p ? 80 ? khz total harmonic distortion (v o = 4.0 v pp , r l = 2.0 k, a v = 1.0) f = 1.0 khz f = 10 khz thd ? ? 0.008 0.08 ? ? % slew rate (v s = 2.5 v, v o = ? 2.0 v to 2.0 v, r l = 2.0 k, a v = 1.0) positive slope negative slope sr 1.0 1.0 1.6 1.6 6.0 6.0 v/ s
ncs2001, ncv2001 http://onsemi.com 5 v+ 2 v/div 1 s/div) v cc = 2.5 v v ee = ? 2.5 v r l = 10 k to gnd t a = 25 c phase margin = 60 gain phase ? 40 ? 20 0 20 40 60 80 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 1.e+06 1.e+07 ? 225 ? 180 ? 135 ? 90 ? 45 0 45 0 0 2.0 8.0 10 12 i l , load current (ma) 0.1 0.2 0.3 ? 0.3 ? 0.2 ? 0.1 0 v cc v ee high state output sourcing current low state output sinking current v cc = 2.5 v v ee = ? 2.5 v i l to gnd t a = 25 c 4.0 6.0 v sat , output saturation voltage (v) v sat , output saturation voltage (v) t a , ambient temperature ( c) figure 2. split supply output saturation vs. load resistance figure 3. split supply output saturation vs. load current figure 4. input bias current vs. temperature figure 5. gain and phase vs. frequency figure 6. transient response figure 7. slew rate 0 100 1.0 k 10 k 100 k 1.0 m r l , load resistance ( ) 0.2 0.4 0.6 ? 0.6 ? 0.4 ? 0.2 0 v cc v ee high state output sourcing current low state output sinking current v cc = 2.5 v v ee = ? 2.5 v r l to gnd t a = 25 c a vol , gain (db) i ib , input current (pa) f, frequency (hz) m, excess phase ( ) 1000 100 1.0 0 0 25 50 75 100 125 10 v cc = 2.5 v v ee = ? 2.5 v ? 2 v ? 2 v ? 2 v ? 2 v 2 v 2 v v out 2 v/div v+ 0.1 v/div v out 0.1 v/div 1 s/div) 0 v 0.2 v 0 v 0.2 v
ncs2001, ncv2001 http://onsemi.com 6 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v s, supply voltage (v) ? 40 c 25 c 85 c output pulsed test at 3% duty cycle ii sc i, output short circuit current (ma) 0 50 100 150 200 250 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 50 100 150 200 250 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 10 20 30 40 50 60 70 80 90 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 1.e+06 1.e+07 0 10 20 30 40 50 60 70 80 90 1.e+01 1.e+02 1.e+03 1.e+04 1.e+05 1.e+06 1.e+ 0 1 0 f, frequency (hz) 2 3 4 5 6 v s = 1.5 v v s = 2.5 v v s = 0.5 v a v = 1.0 r l = 10 k t a = 25 c v o, output voltage (v pp ) i d , supply current (ma) f, frequency (hz) f, frequency (hz) figure 8. output voltage vs. frequency figure 9. common mode rejection vs. frequency figure 10. power supply rejection vs. frequency figure 11. output short circuit sinking current vs. supply voltage v cc = 2.5 v v ee = ? 2.5 v t a = 25 c psr, power supply rejection (db) v s , supply voltage (v) 85 c figure 12. output short circuit sourcing current vs. supply voltage figure 13. supply current vs. supply voltage psr + psr ? v cc = 2.5 v v ee = ? 2.5 v t a = 25 c v s, supply voltage (v) ? 40 c 25 c 85 c output pulsed test at 3% duty cycle cmr, common mode rejection (db) i isc i, output short circuit current (ma) 1.e+03 1.e+04 1.e+05 1.e+06 psr ? psr + 25 c ? 40 c
ncs2001, ncv2001 http://onsemi.com 7 t a , ambient temperature ( c) 2.0 ? 50 ? 25 0 25 50 75 100 1.5 1.0 0.5 0 125 r l = 10 k c l = 10 pf t a = 25 c +slew rate, v s = 0.45 v ? slew rate, v s = 2.5 v ? slew rate, v s = 0.45 v +slew rate, v s = 2.5 v sr, slew rate (v/ s) 2.5 10 1.0 0.1 0.01 ? 50 ? 25 0 25 50 75 100 125 t a , ambient temperature ( c) v cc = 2.5 v v ee = ? 2.5 v r l = 10 k c l = 10 pf 10 1.0 0.01 0.1 f, frequency (hz) 10 1.0 k 100 100 k 10 k v s = 2.5 v v out = 4.0 v pp r l = 2.0 k t a = 25 c figure 14. total harmonic distortion vs. frequency with 1.0 v supply figure 15. total harmonic distortion vs. frequency with 1.0 v supply figure 16. total harmonic distortion vs. frequency with 5.0 v supply figure 17. total harmonic distortion vs. frequency with 5.0 v supply f, frequency (hz) f, frequency (hz) f, frequency (hz) 10 10 1.0 1.0 k 100 0.1 0.001 10 k 100 k r l = 2.0 k t a = 25 c a v = 1.0 a v = 10 a v = 100 a v = 1000 10 1.0 k 10 k 100 100 k 0.01 0.1 1.0 10 10 1.0 k 100 100 k 10 k v s = 2.5 v v out = 4.0 v pp r l = 10 k t a = 25 c figure 18. slew rate vs. temperature figure 19. gain bandwidth product vs. temperature thd, total harmonic distortion (%) thd, total harmonic distortion (%) thd, total harmonic distortion (%) thd, total harmonic distortion (%) gbw, gain bandwidth product (mhz) v s = 0.5 v v out = 0.4 v pp r l = 10 k t a = 25 c v s = 0.5 v v out = 0.4 v pp a v = 1.0 a v = 10 a v = 100 a v = 1000 a v = 1.0 a v = 10 a v = 100 a v = 1000 0.01 a v = 1.0 a v = 10 a v = 100 a v = 1000 0.001 0.9 1.0 1.1 1.2 1.3
ncs2001, ncv2001 http://onsemi.com 8 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 80 0 60 40 20 v s , supply voltage (v) phase margin 100 0 60 40 20 gain margin r l = 10 k c l = 10 pf t a = 25 c m, phase margin ( ) a m , gain margin (db) 100 80 phase margin gain margin 80 0 60 40 20 c l , output load capacitance (pf) a v = 100 v cc = 2.5 v v ee = ? 2.5 v r l = 10 k to gnd t a = 25 c 80 0 60 40 20 1.0 100 1000 10 am, gain margin (db) m, phase margin ( ) 100 100 100 0 60 40 20 80 0 60 40 20 phase margin gain margin ? 50 ? 25 0 25 50 75 100 125 v cc = 2.5 v v ee = ? 2.5 v r l = 10 k c l = 10 pf t a , ambient temperature ( c) am, gain margin (db) m, phase margin ( ) 80 100 v s = 0.5 v ? 20 0 20 40 60 80 ? 180 ? 135 ? 90 ? 45 r l = 10 k t a = 25 c 10 k 100 k 1.0 m 10 m 100 m ? 225 v s = 2.5 v ? 40 m, phase margin ( ) 10 100 1.0 k 100 k phase margin gain margin 10 k 0 10 20 30 40 60 50 70 v cc = 2.5 v v ee = ? 2.5 v r l = 10 k c l = 10 pf t a = 25 c 0 10 20 30 40 60 50 70 r t , differential source resistance ( ) figure 20. voltage gain and phase vs. frequency figure 21. gain and phase margin vs. temperature figure 22. gain and phase margin vs. differential source resistance figure 23. gain and phase margin vs. output load capacitance f, frequency (hz) figure 24. output voltage swing vs. supply voltage 0 0.5 v s , supply voltage (v) 8.0 0 6.0 4.0 2.0 r l = 10 k t a = 25 c split supplies m, excess phase ( ) a vol , gain (db) a v , gain margin (db) v out , output volltage (v pp ) 1.0 1.5 2.0 2.5 3.0 3.5 v s = 2.5 v figure 25. gain and phase margin vs. supply voltage
ncs2001, ncv2001 http://onsemi.com 9 ? 3.5 ? 2.5 ? 1.5 ? 0.5 0.5 1.5 2.5 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 v s , supply voltage (v) v io = 5.0 mv r l = c l = 0 a v = 1.0 t a = 25 c 10 0 15 ? 5 5 ? 20 20 v cm , common mode input voltage range (v) v io , input offset voltage (mv) ? 3.0 1.0 2.0 0 ? 1.0 3.0 ? 2.0 ? 10 v s = 2.5 v r l = c l = 0 a v = 1.0 t a = 25 c ? 15 0 10 20 30 40 50 60 0.0 0.5 1.0 1.5 2.0 2.5 v s , supply voltage (v) figure 26. open loop voltage gain vs. supply voltage t a = 25 c r l = 10 k r l = 2.0 k figure 27. input offset voltage vs. common mode input voltage range v s = 2.5 v figure 28. input offset voltage vs. common mode input voltage range, v s = 0.45 v figure 29. common ? mode input voltage range vs. power supply voltage a vol , open loop gain (db) v cm , common mode input voltage range (v) 10 0 15 ? 5 5 ? 20 20 v cm , common mode input voltage range (v) v io , i nput off set v o l tage ( m v) ? 10 ? 15 ? 0.5 ? 0.4 ? 0.3 ? 0.2 ? 0.1 0 0.1 0.2 0.3 0.4 0.5 v s = 2.5 v r l = c l = 0 a v = 1.0 t a = 25 c
ncs2001, ncv2001 http://onsemi.com 10 application information and operating description general information the ncs2001 is an industry first rail ? to ? rail input, rail ? to ? rail output amplifier that features guaranteed sub ? one voltage operation. this unique feature set is achieved with the use of a modified analog cmos process that allows the implementation of depletion mosfet devices. the amplifier has a 1.0 mhz gain bandwidth product, 2.2 v/ s slew rate and is operational over a power supply range less than 0.9 v to as high as 7.0 v. inputs the input topology chosen for this device series is unconventional when compared to most low voltage operational amplifiers. it consists of an n ? channel depletion mode differential transistor pair that drives a folded cascade stage and current mirror. this configuration extends the input common mode voltage range to encompass the v ee and v cc power supply rails, even when powered from a combined total of less than 0.9 v. fi gures 27 and 28 show the input common mode voltage range versus power supply voltage. the differential input stage is laser trimmed in order to minimize offset voltage. the n ? channel depletion mode mosfet input stage exhibits an extremely low input bias current of less than 10 pa. the input bias current versus temperature is shown in figure 4. either one or both inputs can be biased as low as v ee minus 300 mv to as high as 7.0 v without causing damage to the device. if the input common mode voltage range is exceeded, the output will not display a phase reversal. if the maximum input positive or negative voltage ratings are to be exceeded, a series resistor must be used to limit the input current to less than 2.0 ma. the ultra low input bias current of the ncs2001 allows the use of extremely high value source and feedback resistor without reducing the amplifier?s gain accuracy. these high value resistors, in conjunction with the device input and printed circuit board parasitic capacitances c in , will add an additional pole to the single pole amplifier in figure 30. if low enough in frequency, this additional pole can reduce the phase margin and significantly increase the output settling time. the effects of c in , can be canceled by placing a zero into the feedback loop. this is accomplished with the addition of capacitor c fb . an approximate value for c fb can be calculated by: c fb r in c in r fb figure 30. input capacitance pole cancellation + - output r fb c in r in c fb c in = input and printed circuit board capacitance input output the output stage consists of complementary p and n ? channel devices connected to provide rail ? to ? rail output drive. w ith a 2.0 k load, the output can swing within 50 mv of either rail. it is also capable of supplying over 75 ma when powered from 5.0 v and 1.0 ma when powered from 0.9 v. when connected as a unity gain follower, the ncs2001 can directly drive capacitive loads in excess of 820 pf at room temperature without oscillating but with significantly reduced phase margin. the unity gain follower configuration exhibits the highest bandwidth and is most prone to oscillations when driving a high value capacitive load. the capacitive load in combination with the amplifier?s output impedance, creates a phase lag that can result in an under ? damped pulse response or a continuous oscillation. figure 32 shows the effect of driving a large capacitive load in a voltage follower type of setup. when driving capacitive loads exceeding 820 pf, it is recommended to place a low value isolation resistor between the output of the op amp and the load, as shown in figure 31. the series resistor isolates the capacitive load from the output and enhances the phase margin. refer to figure 33. larger values of r will result in a cleaner output waveform but excessively large values will degrade the large signal rise and fall time and reduce the output amplitude. depending upon the capacitor characteristics, the isolation resistor value will typically be between 50 to 500 . the output drive capability for resistive and capacitive loads is shown in figures 2, 3, and 23. figure 31. capacitance load isolation + - output r isolation resistor r = 50 to 500 c l input note that the lowest phase margin is observed at cold temperature and low supply voltage.
ncs2001, ncv2001 http://onsemi.com 11 figure 32. small signal transient response with large capacitive load figure 33. small signal transient response with large capacitive load and isolation resistor v s = 0.45 v v in = 0.8 v pp r = 0 c l = 820 pf a v = 1.0 t a = 25 c v in v out v in v out v s = 0.45 v v in = 0.8 v pp r = 51 c l = 820 pf a v = 1.0 t a = 25 c
ncs2001, ncv2001 http://onsemi.com 12 the non ? inverting input threshold levels are set so that the capacitor voltage oscillates between 1/3 and 2/3 of v cc . this requires the resistors r 1a , r 1b and r 2 to be of equal value. the following formula can be used to ap- proximate the output frequency. r t 470 k r 2 470 k r 1b 470 k r 1a 470 k c t 1.0 nf 0.9 v f o = 1.5 khz 0.67 v cc r 1b 470 k v cc d 2 1n4148 f o - + - + 0.9 v f o 1 1.39 r t c t v cc 0.33 v cc 0 output voltage timing capacitor voltage v cc r 2 470 k d 1 1n4148 10 k 10 k 1.0 m cw r 1a 470 k c t 1.0 nf 0.67 v cc v cc 0.33 v cc 0 output voltage timing capacitor voltage 0.67 v cc v cc 0.33 v cc 0 output voltage timing capacitor voltage the timing capacitor c t will charge through diode d 2 and discharge through diode d 1 , allowing a variable duty cycle. the pulse width of the signal can be programmed by adjusting the val ue of the trimpot. the ca- pacitor voltage will oscillate between 1/3 and 2/3 of v cc , since all the resistors at the non ? inverting input are of equal value. clock ? wise, low duty cycle counter ? clock ? wise, high duty cycle figure 34. 0.9 v square wave oscillator figure 35. variable duty cycle pulse generator cww
ncs2001, ncv2001 http://onsemi.com 13 r 1 1.0 m r 2 1.0 m r 3 1.0 k c in 10 f 2.5 v 10,000 f + - c eff. r 1 r 3 c in ? 2.5 v f l 1 2 r 1 c 1 200 hz f h 1 2 r f c f 4.0 khz a f 1 r f r 2 11 a f f l f h r 1 10 k r f 100 k r 2 10 k c f 400 pf 0.5 v ? 0.5 v c 1 80 nf v o + - v in figure 36. positive capacitance multiplier figure 37. 1.0 v voiceband filter
ncs2001, ncv2001 http://onsemi.com 14 i s v o 435 ma 34.7 mv 212 ma 36.9 mv 3.3 k r 3 1.0 k r l i s 1.0 v r 4 2.4 k v l v o for best performance, use low tolerance resistors. + - r sense r 5 1.0 k r 1 1.0 k r 6 r sense v cc + - v supply v in i sink v in r sense figure 38. high compliance current sink figure 39. high side current sense r 2 75 ordering information device package shipping ? ncs2001sn1t1g sot23 ? 5 (pb ? free) 3000 / tape & 7? reel ncs2001sn2t1g ncv2001sn2t1g* NCS2001SQ1T2G sc70 ? 5 (pb ? free) ncs2001sq2t2g ncv2001sq2t2g* ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *ncv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q100 qualified and ppap capable.
ncs2001, ncv2001 http://onsemi.com 15 package dimensions tsop ? 5 case 483 ? 02 issue k notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. mold flash, protrusions, or gate burrs shall not exceed 0.15 per side. dimension a. 5. optional construction: an additional trimmed lead is allowed in this location. trimmed lead not to extend more than 0.2 from body. dim min max millimeters a 3.00 bsc b 1.50 bsc c 0.90 1.10 d 0.25 0.50 g 0.95 bsc h 0.01 0.10 j 0.10 0.26 k 0.20 0.60 m 0 10 s 2.50 3.00 123 54 s a g b d h c j 0.7 0.028 1.0 0.039 mm inches scale 10:1 0.95 0.037 2.4 0.094 1.9 0.074 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* 0.20 5x c ab t 0.10 2x 2x t 0.20 note 5 c seating plane 0.05 k m detail z detail z top view side view a b end view
ncs2001, ncv2001 http://onsemi.com 16 package dimensions sc ? 88a (sc ? 70 ? 5/sot ? 353) sq suffix case 419a ? 02 issue l notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419a ? 01 obsolete. new standard 419a ? 02. 4. dimensions a and b do not include mold flash, protrusions, or gate burrs. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h --- 0.10 --- 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 12 3 4 5 a g s d 5 pl h c n j k ? b ? mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 solder footprint on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ncs2001/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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